AOC2401 30v p-channel mosfet general description product summary v ds i d (at v gs =-10v) -3a r ds(on) (at v gs =-10v) < 41m w r ds(on) (at v gs =-4.5v) < 47m w r ds(on) (at v gs =-2.5v) < 58m w typical esd protection hbm class 2 symbol the AOC2401 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v while retaining a 12v v gs(max) rating. maximum units parameter absolute maximum ratings t a =25c unless otherwise noted -30v top view bottom view pin1(g) g s 2 3 1 4 d d mcsp 1.57x1.57_4 top view bottom view s g d symbol v ds v gs t a =25c i d i dm t a =25c p d t j , t stg symbol t 10s steady-state note 1. mounted on minimum pad pcb note 2. pw <300 s pulses, duty cycle 0.5% max source current (dc) note1 power dissipation note1 c/w r q ja 140 190 170 units parameter w v maximum units parameter max junction and storage temperature range -55 to 150 drain-source voltage -30 a -3 -45 v 12 gate-source voltage source current (pulse) note2 0.55 c/w maximum junction-to-ambient a d 230 maximum junction-to-ambient a c thermal characteristics typ rev 0 : oct. 2012 www.aosmd.com page 1 of 5
AOC2401 symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 10 m a v gs(th) gate threshold voltage -0.6 -0.93 -1.3 v 34 41 t j =125c 47.5 58 37 47 m w 44 58 m w g fs 12 s v sd -0.68 -1 v c iss 1327 pf c oss 158 pf c rss 102 pf r g 15.5 w q g(10v) 28 40 nc q g(4.5v) 13.5 19 nc q gs 2 nc q gd 4 nc t d(on) 7 ns t r 5 ns t d(off) 190 ns t f 62 ns t rr 15 ns q rr 5 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. v gs =-2.5v, i d =-1a total gate charge body diode reverse recovery charge i f =-1.5a, di/dt=100a/ m s input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =-10v, v ds =-15v, i d =-1.5a gate source charge gate drain charge v gs =-10v, v ds =-15v, r l =10 w , r gen =3 w gate resistance gate-body leakage current forward transconductance diode forward voltage r ds(on) static drain-source on-resistance m w i s =-1a,v gs =0v v ds =-5v, i d =-1.5a v gs =-4.5v, i d =-1a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a zero gate voltage drain current body diode reverse recovery time drain-source breakdown voltage i d =-250 m a, v gs =0v v gs =-10v, i d =-1.5a reverse transfer capacitance i f =-1.5a, di/dt=100a/ m s v gs =0v, v ds =-15v, f=1mhz switching parameters v ds =v gs i d =-250 m a v ds =0v, v gs =12v rev 0: oct. 2012 www.aosmd.com page 2 of 5
AOC2401 typical electrical and thermal characteristics 0 10 20 30 40 50 0 1 2 3 4 -i d (a) -v gs (volts) figure 2: transfer characteristics 10 20 30 40 50 60 0 1 2 3 4 5 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-2.5v i d =-1a v gs =-10v i d =-1.5a v gs =-4.5v i d =-1a 25 c 125 c v ds =-5v v gs =-10v 0 10 20 30 40 50 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics v gs =-2.0v -2.5v -10v -3.0v -4.5v v gs =-4.5v v gs =-2.5v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 10 20 30 40 50 60 70 80 0 2 4 6 8 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =-1.5a 25 c 125 c rev 0: oct. 2012 www.aosmd.com page 3 of 5
AOC2401 typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-15v i d =-1.5a 0 10 20 30 40 50 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction - to - t j(max) =150 c t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms figure 10: single pulse power rating junction - to - ambient operating area 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =230 c/w rev 0: oct. 2012 www.aosmd.com page 4 of 5
AOC2401 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform d u t d iode r ecovery t est c ircuit & w aveform s v ds + rr q = - idt - + v d c d u t v d d v g s v ds v g s r l r g v gs v d s 1 0% 90 % r es istiv e s w itch ing t e st c ircu it & w a ve fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff ig v gs - + vd c d u t l v gs v ds isd isd v ds - i f di/dt i r m v dd v dd t rr rev 0: oct. 2012 www.aosmd.com page 5 of 5
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